| 摘要 |
PURPOSE:To inhibit the increase of thickness, and to stabilize connection between conductors by applying and forming a metallic mask layer into an inorganic group insulating layer and shaping a stepped section into a through-hole, using the metallic mask layer as a mask. CONSTITUTION:A first SiO2 layer 2 is applied onto a lower-layer Al electrode 1, and a metallic mask layer 3, a center of which has a hole, is formed. An SiO2 layer 4 is applied through a sputtering method, the hole of a resist in size smaller than the outer circumference of the mask layer 3 in a through-hole section and larger than the hole at the center is shaped, and the SiO2 layer 4 is wet-etched. An etchant reaches the mask layer, but Cr functions as a second mask because Cr is not dissolved into the etchant, the central section in which there is no Cr is etched, and the through-hole in which there is a stepped section is formed. Accordingly, the increase of thickness is inhibited, and connection between conductors is stabilized. |
