| 发明名称 |
Tapered laser or waveguide optoelectronic method |
| 摘要 |
A method and apparatus for forming tapered thickness and material content of III-V material, or alloys thereof, in particular GaAs and AlGaAs, by gradient thermal heating of substrates during epitaxial growth and the optoelectronic structures formed thereby. |
| 申请公布号 |
US4855255(A) |
申请公布日期 |
1989.08.08 |
| 申请号 |
US19880171952 |
申请日期 |
1988.03.23 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
GOODHUE, WILLIAM D. |
| 分类号 |
C30B23/02;C30B25/02;H01L21/203;H01L33/00;H01S5/10;H01S5/18;H01S5/223;H01S5/227;H01S5/32;H01S5/323;H01S5/343;H01S5/42 |
主分类号 |
C30B23/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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