| 摘要 |
A semiconductor device wherein a semiconductor region which is electrically floating is provided in the main surface of a semiconductor substrate under a bonding pad. This construction helps prevent short-circuiting between the semiconductor substrate and the bonding pad, which is liable to occur when the wires are to be bonded. Resistance elements and elements for preventing electrostatic breakdown are also formed in an island region in which is formed the floating semiconductor region. Therefore, vicinities of bonding pads, that were not utilized thus far for forming elements, can now be effectively utilized to increase the degree of integration.
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