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发明名称
METHOD FOR INTRODUCING IMPURITY TO SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH01194320(A)
申请公布日期
1989.08.04
申请号
JP19880018361
申请日期
1988.01.28
申请人
FUJI ELECTRIC CO LTD
发明人
ISHIWATARI OSAMU;SATO NORITADA
分类号
H01L21/22;H01L21/265
主分类号
H01L21/22
代理机构
代理人
主权项
地址
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