| 摘要 |
PURPOSE:To obtain an FET sensor which permits use stably for a long time, by employing a thin film comprising a functional compound and a thin film comprising a organic compound support surrounding it as a semiconductor layer thereof. CONSTITUTION:A gate electrode 2 is formed on an insulation substrate 1 and an insulation film 3 thereon 2 by an electron beam evaporation method. A thin film 4 comprising a functional compound and an organic compound surrounding it is formed between a source electrode 5 and a drain electrode 6 at a space in contact with the film 3. With such an arrangement, a current control between the electrodes 5 and 6 is accomplished by a gate voltage and a furthermore, the optimization of a function of the compound having a detecting function can be controlled by the gate voltage. Thus, as there is no reaction at a gate oxidation film interface, a sensor is obtained which can withstand use for a long time with a stable sensor characteristic. This also permits the control of the function thereby achieving the optimization of the detecting function. |
