| 摘要 |
<p>PURPOSE:To keep a program voltage constant by controlling the transistor of a memory device by a high voltage inverter having a booster circuit with a small current feeding force is supplied as a power source, and another current feeder. CONSTITUTION:The high voltage inverter 23 having the booster circuit with the small current feeding force as the power source outputs a voltage Vpp to the node 1 of the current feeder 24 at the time of writing data, and when the voltage of a word line increases and arrives at a voltage V, the feeder 24 is started up. And a current by electrical charge charged by a clock phi is supplied to the capacitor 12 of the feeder 24, and the potential of the node 1 is kept at the potential Vpp, and is controlled by the gate of the NMOSFET 21 of the memory device 20. Similarly in reading out the data, the circuit is controlled also by another current feeder 24 different from the inverter 23, and the program voltage to be impressed on the memory device is kept constant without being affected by the influence of the fluctuation of a source voltage and the threshold voltage of a transistor, and an operation can be accelerated, and also, it can be constituted of an enhancement type transistor and is generated easily.</p> |
