发明名称 A semiconductor substrate having a superconducting thin film.
摘要 <p>A semiconductor substrate comprising a single crystal substrate base such as silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln1Ba2Cu3O7- delta (Ln is lanthanide).</p>
申请公布号 EP0325877(A1) 申请公布日期 1989.08.02
申请号 EP19880403329 申请日期 1988.12.26
申请人 SUMITOMO ELECTRIC INDUSTRIES LIMITED 发明人 ITOZAKI, HIDEO;HARADA, KEIZO;FUJIMORI, NAOJI;YAZU, SHUJI;JODAI, TETSUJI
分类号 H01L39/14;H01L39/24 主分类号 H01L39/14
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