MANUFACTURE OF BURIED TYPE SEMICONDUCTOR LASER,申请号JP19880015939-传众专利搜索

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发明名称	MANUFACTURE OF BURIED TYPE SEMICONDUCTOR LASER
摘要
申请公布号	JPH01192184(A)	申请公布日期	1989.08.02
申请号	JP19880015939	申请日期	1988.01.28
申请人	NIPPON TELEGR & TELEPH CORP <NTT>	发明人	OKAYASU MASANOBU;KOUMAE ATSUO;TAKESHITA TATSUYA;KOGURE OSAMU
分类号	H01L21/322;H01S5/00	主分类号	H01L21/322
代理机构		代理人
主权项
地址

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