| 摘要 |
<p>A pseudo-static RAM device is disclosed which operates fast in the reading or writing mode and permits a long refreshing period in the self-refreshing mode. In the pseudo-static RAM of the present invention, an activation signal for enabling the sense amplifiers is generated with a variable delay time, from a time point when a designated word line is driven. The delay time is switched to be such a long one in response to a control signal representing the self-refreshing mode that is enough to transfer 100% of the amount of information stored in the designated, driven memory cell to the bit line connected thereto, and is maintained short when the control signal representing the self-refreshing mode is not present. <IMAGE></p> |
