| 摘要 |
<p>Disclosed is an aluminum nitride thin film circuit board having an aluminum nitride substrate (1) and a conductive thin film pattern (3, 4) formed on the substrate (1). The conductive thin film pattern (3, 4) has a multi-layer structure selected from the group consisting of Ti/Ni/Au, Ti/Pd/Au, Ti/Pt/Au, Ni/Au, Cr/Au, and Cr/Cu/Au, and a boundary layer (2) of A l -N-M-O (M is Ti, Ni, or Cr) is formed between the substrate (1) and the conductive thin film pattern (3, 4). Since the boundary layer (2) is formed, bonding properties between the substrate (1) and the conductive thin film pattern (3, 4) are improved. In particular, when the boundary layer (2) contains 0.02 to 30 atomic% of oxygen, a higher bonding strength can be obtained.</p> |
