发明名称 MOS semiconductor circuit
摘要 An MOS semiconductor circuit includes cascade connected logical circuits. The MOS semiconductor circuit further includes an MOS transistor circuit having at least one first MOS transistor coupled between a source voltage terminal and the output node of the individual logical circuits, and a second MOS transistor, which has the same conductivity type as the first MOS transistor and has its gate and drain short-circuited, with this gate being coupled to the gate of the first MOS transistor. The MOS semiconductor circuit also includes a current control circuit, which is coupled to the drain of the second MOS transistor for providing a predetermined current between the source and drain of the second MOS transistor.
申请公布号 US4853654(A) 申请公布日期 1989.08.01
申请号 US19870072443 申请日期 1987.07.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAKURAI, TAKAYASU
分类号 H03K5/05;H03K3/011;H03K3/354 主分类号 H03K5/05
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