| 摘要 |
PURPOSE:To effectively cure a resist to a predetermined depth in a short time without damages of the resist, to suppress gas discharge in succeeding processes and to prevent an element and a manufacturing apparatus from being contaminated by employing an ion radiation for curing the resist. CONSTITUTION:After a resist is formed on a semiconductor wafer, it is placed on a stage 14 in a processor 10 evacuated in vacuum by an evacuation system 15, and a whole semiconductor wafer 13 is radiated with Ar ion beam radiated from an ion source 11. Thus, gas is discharged from the resist by an ion collision, the resist can be cured in a short time without collapse of its pattern, and gas discharge in a later ion implanting step is eliminated by the curing, thereby preventing an element and a manufacturing apparatus form being contaminated. |
