发明名称 |
Process for manufacture of a semiconductor memory device |
摘要 |
A semiconductor memory device such as a MOS dynamic RAM comprises transistor portions (2, 3 and 5) for writing and reading a signal and capacitor portions (1, 2, 6 and 9) by pn junction for storing a signal. The capacitor portions have preferably as large a capacitance as possible. For this purpose, a capacitor hole (7) is formed in a p type semiconductor substrate (6) and an n type semiconductor region (9) is provided along the capacitor hole (7) so that the pn junction area therebetween is increased and the capacitance is made large.
|
申请公布号 |
US4853348(A) |
申请公布日期 |
1989.08.01 |
申请号 |
US19870137298 |
申请日期 |
1987.12.22 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUBOUCHI, NATSURO;KIMATA, MASAFUMI |
分类号 |
H01L27/10;H01L27/108;H01L29/92 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|