| 摘要 |
PURPOSE:To prevent the generation of a defect on the surface of the semiconductor wafer by a method wherein the semiconductor wafer is surrounded with silicon nitride or a material containing silicon nitride when the heat treatment is to be performed. CONSTITUTION:A cylindrical tube consisting of a polycrystalline substance of silicon nitride or a quartz tube, whose outside wall is covered with said polycrystalline substance, is set up inside of a heater 4, and a quartz reaction tube 3 to be put in with a boat 2 mounting the semiconductor wafer 1 is set up inside of the quartz tube thereof. Namely, the material containing silicon nitride is set up around the semiconductor wafer. Gettering of a heavy metal contaminant 5 emitted from the heater 4 is attained by silicon nitride or the polycrystalline substance 7 of silicon, no contaminant reaches the surface 6 of the semiconductor wafer 1 set up inside of the quartz tube 3, and accordingly the generation of the defect on the surface to be caused by heavy metal contamination can be prevented. |
