| 摘要 |
PURPOSE:To improve the connecting reliability of a CCB bump, by providing a configuration so that the inner periphery length of a contact hole becomes long when a ground film is deposited and formed in the contact hole that is opened and formed in the surface protecting film of a semiconductor wafer and the CCB bump is bonded to the surface. CONSTITUTION:An Si3N4 film 2 is deposited on the surface of a wafer 1. A hole is provided at a specified place by photoresist/etching, and an Al wiring 3 is exposed. Thereafter, a glass protecting film 4 comprising SiO2 is formed. Then, photoresist having a comb-teeth pattern is deposited on the surface of the glass protecting film 4. Wet etching is performed, and a contact hole 5 is formed. Then, a thin ground film 6 comprising chromium/copper/gold and the like is evaporated on the inner periphery of the hole 5. Thereafter, photoresist is deposited on the surface of the wafer 1. The hole 5 is opened by etching, and the ground film 6 is exposed. A solder film 8 comprising tin and lead is formed. The photoresist 7 and the unnecessary solder film 8 are removed. Thereafter, the wafer 1 is put into a reflow furnace for fusing and heating. Thus, a CCB bump 9 is formed. |
