| 发明名称 |
Semiconductor device having insulating layer including polyimide film |
| 摘要 |
A semiconductor device has a passivation layer including a polyimide film. Argon ions are implanted in the polyimide film to convert it into an electrically stable insulating film.
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| 申请公布号 |
US4853760(A) |
申请公布日期 |
1989.08.01 |
| 申请号 |
US19870089959 |
申请日期 |
1987.08.25 |
| 申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
ABE, MASAHIRO;AOYAMA, MASAHARU;OHSHIMA, JIRO;AJIMA, TAKASHI |
| 分类号 |
H01L21/768;H01L21/3105;H01L21/3115;H01L21/312;H01L23/522 |
主分类号 |
H01L21/768 |
| 代理机构 |
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