GROWING METHOD FOR POLYCRYSTALLINE SILICON,申请号JP19880014745-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	GROWING METHOD FOR POLYCRYSTALLINE SILICON
摘要
申请公布号	JPH01191413(A)	申请公布日期	1989.08.01
申请号	JP19880014745	申请日期	1988.01.27
申请人	NEC CORP	发明人	NAKAYA TSUNEJI
分类号	H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

您可能感兴趣的专利

sistema de segurança integrado em dispositivo de corte e metodologia de segurança do sistema de segurança integrado em dispositivo de corte

dispositivo de ajuste lateral e esticador central de corrente de triciclo motorizado

elemento almofadado

The multi-functional coating agents, for constructions, based on aqueous silicate binder with variety of mineral fine powders

APPARATUS FOR PACKAGING MEDICINE

MUSICAL INSTRUMENT DIGITAL INTERFACE HARDWARE INSTRUCTION SET

KEY PAD APPARATUS OF MOBILE PHONE

TIMING GENERATION CIRCUIT

MILLIMETER-WAVE COMMUNICATIONS FOR PERIPHERAL DEVICES

Anti-stain coating composition containing copper compound and having improved slime resistance and storage stability

The decomposition method of carbon-dioxide using paper mill sludge

Fluid isolation device

Scrub cosmetic composition comprising salt and/or sugar

RECOILLESS SPEAKER SYSTEM

PLASMA DISPLAY DEVICE

The extracting method of constituents of silkworm and so on, characterized by liquidified extraction by enzyme treatment at low temperature

METHOD AND SYSTEM FOR REDUCING BACKHAUL UTILIZATION DURING BASE STATION HANDOFF IN WIRELESS NETWORKS

MULTIPARTICULATES

Tilting table of machining center