发明名称 |
Method of manufacturing semiconductor integrated circuit device having transistor |
摘要 |
A transistor is formed according to the solid phase epitaxial growth which is one of the semiconductor integrated circuit device manufacturing techniques. A low-concentration impurity region is formed by selective solid phase epitaxial growth instead of using an epitaxial substrate. The solid phase epitaxial growth is performed twice, when a collector region is formed and when a base region is formed. The depth of collector and base regions are determined by the thickness of the solid phase growth layers, respectively.
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申请公布号 |
US4853342(A) |
申请公布日期 |
1989.08.01 |
申请号 |
US19890300224 |
申请日期 |
1989.01.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKA, SHIN-ICHI;OHSHIMA, JIRO |
分类号 |
H01L29/73;H01L21/20;H01L21/331;H01L21/336;H01L21/8222;H01L27/06;H01L29/08;H01L29/10;H01L29/732;H01L29/78 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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