发明名称 Process for forming electrodes for semiconductor devices using focused ion beams
摘要 A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed in greatly reduced.
申请公布号 US4853341(A) 申请公布日期 1989.08.01
申请号 US19870118031 申请日期 1987.11.09
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NISHIOKA, TADASHI;MASHIKO, YOJI;MORIMOTO, HIROAKI;KOYAMA, HIROSHI
分类号 H01L21/768 主分类号 H01L21/768
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