发明名称 |
Process for the preparation of mono-crystalline 3-5 semi-insulating materials by doping and use of the semi-insulating materials thus obtained |
摘要 |
The present invention relates to a process for the preparation of mono-crystalline 3-5 semi-insulating materails by doping, characterized in that the starting charge of type rho is doped with at least one deep donor due to a transition element. It relates also to the use of the semi-insulating materials obtained in the fields of optoelectronics and of rapid electronics.
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申请公布号 |
US4853077(A) |
申请公布日期 |
1989.08.01 |
申请号 |
US19870035979 |
申请日期 |
1987.04.08 |
申请人 |
ETAT FRANCAIS |
发明人 |
LAMBERT, BERTRAND;TOUDIC, YVES;COQUILLE, RENE |
分类号 |
H01L21/205;C30B11/00;C30B15/00;C30B15/04;C30B27/02;C30B29/40;H01L21/18;H01L21/208 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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