发明名称 Process for the preparation of mono-crystalline 3-5 semi-insulating materials by doping and use of the semi-insulating materials thus obtained
摘要 The present invention relates to a process for the preparation of mono-crystalline 3-5 semi-insulating materails by doping, characterized in that the starting charge of type rho is doped with at least one deep donor due to a transition element. It relates also to the use of the semi-insulating materials obtained in the fields of optoelectronics and of rapid electronics.
申请公布号 US4853077(A) 申请公布日期 1989.08.01
申请号 US19870035979 申请日期 1987.04.08
申请人 ETAT FRANCAIS 发明人 LAMBERT, BERTRAND;TOUDIC, YVES;COQUILLE, RENE
分类号 H01L21/205;C30B11/00;C30B15/00;C30B15/04;C30B27/02;C30B29/40;H01L21/18;H01L21/208 主分类号 H01L21/205
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