| 发明名称 |
GATE CIRCUIT |
| 摘要 |
<p>A gate circuit has a bias diode (9), which is connected across the gate and the source of a current source FET (4) of a buffer part (3, 4), and a capacitor (8), which is connected across the gate of said FET (4) and an input terminal (VI); and thereby a high load drivability with a low power consumption rate is realized.</p> |
| 申请公布号 |
CA1258103(A) |
申请公布日期 |
1989.08.01 |
| 申请号 |
CA19860522704 |
申请日期 |
1986.11.12 |
| 申请人 |
MATSUSHITA ELECTRIC, INDUSTRIAL CO., LTD. |
发明人 |
OTSUKI, TATSUO;SHIMANO, AKIO;AOKI, HIROMITSU;AOKI, IKUKO |
| 分类号 |
H03K19/0185;H03K17/687;H03K19/017;H03K19/0944;H03K19/0952;(IPC1-7):H03K19/094 |
主分类号 |
H03K19/0185 |
| 代理机构 |
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