| 摘要 |
PURPOSE:To enable manufacturing a high integration density mask ROM which does not contain MOS transistors in a memory cell, by providing suitably an insulating film at crossed points of diffusion layers and metal layers with contact holes, in accordance with information to be stored, and forming Schottky junctions. CONSTITUTION:On a plurality of diffusion layers 21, 22,... on a substrate 1 surface, a plurality of metal layers 11, 12,... perpendicularly crossing via an insulating film are arranged. At the crossed points of the diffusion layers 21, 22... and the metal layers 11, 12,..., contacts are suitably formed in accordance with information to be stored, and Schottky junctions are formed. Therefore the overlapping region of the diffusion layer and the metal layer can be constituted in an area smaller than the contact hole 3 corresponding with an ROM data, so that the wiring width of the diffusion layer and the metal layer can be minimized. Thereby the wiring width, i.e., memory cell can be made small as compared with a mask ROM wherein contacts are formed in the width of wiring. |
