| 摘要 |
PURPOSE:To manufacture the title photovoltaic element in high conversion efficiency by a method wherein, after forming a single metallic layer on a substrate, a p-type CdTe layer or a compound semiconductor layer containing the same is foremd on the metallic layer using electrochemical reaction and then an n-type CdS layer or another compound semiconductor layer containing the same is further formed on the former compound semiconductor layer. CONSTITUTION:The ohmic contact on the substrate 1 is improved. A Cd layer 2 as a single metallic layer is coated and foremd on the substrate 1 while a p-type CdTe layer 3 is pattern-formed on the Cd layer 2 and an n-type CdS layer 4 is further pattern-formed on the p-type CdTe layer 3. Besides, silver electrodes 5, 6 are respectively formed on the part of Cd layer 2 not formed of the p-type CdTe layer 3 and the n-type CdS layer 4 while leads 7, 8 are respectively led out of the silver electrodes 5, 6. Furthermore, a transparent epoxy resin layer 9 for protecting the title element is lamination-formed on the n-type CdS layer 4 and the exposed part of the Cd layer 2. When light is entered from the epoxy resin layer 9 side, power is generated in the p-type CdTe layer 3 and the n-type CdS layer 4 to be led out through the leads 7, 8. Through these procedures, the title element can be provided with high mechanical strength and machinability while increasing the conversion efficiency of the element. |
