| 摘要 |
<p>PURPOSE:To enable a pattern to be registered with high precision independently of the thickness of a wafer, by arranging photomasks having marks thereon over a silicon wafer having at least two etching holes therethrough while the faces of the photomasks having the marks are opposed to each other, for registering the pattern. CONSTITUTION:Etching holes 8, 8 are formed in a wafer 7 while marks 11, 11 and 13, 13 are formed in photomasks 10 and 12, respectively, and, the etching holed 8, 8 are put in correspondence with the marks 11, 11 and 13, 13. It is determined which is larger in configurations the mark 11 or the etching hole 8, accoding to whether a pattern of the photomask 10 is black or transparent. The photomask 10 can be registered by means of a reflection-type microscope while it is irradiated with visible light from above. The same can be said for the marks 13, 13. Since the marks 11, 11 and surface apertures 9a, 9a are close to each other with a very small gap therebetween, they can be observed approximately in the same plate. In this manner, the pattern can be registered with high precision.</p> |
