| 摘要 |
PURPOSE:To prevent a semiconductor element from damaging due to the radiation of a radioactive ray by irradiating a whole semiconductor substrate with high energy particles at a predetermined curvature in a state elastically bent in a recessed shape. CONSTITUTION:A movable sample base 5 is formed in a structure that its surface is recessed, for example, by a curved surface having 100m of radius of curvature. A semiconductor substrate 6 is mechanically pressed on the base 5, similarly bent, the bent substrate 6 is radiated with an electron beam 2 to be performed by lithography. A sample 6 is formed in a predetermined shape at resist by the radiation of the beam 2 at the semiconductor substrate coated with the resist on its surface. When the Si substrate is formed in a recess shape, the stress of an SiO2/Si boundary becomes compressive, rendering less influence to the bonding to the vicinity of the boundary due to the radiation of a radioactive ray, and a boundary level is less generated. Thus, the radiation damage of the substrate is reduced, thereby obtaining a semiconductor device having high reliability. |
