| 摘要 |
PURPOSE:To remove an element of bad life property caused by meniscus line at selecting test for a short time, by a method wherein stripe direction of a substrate single-crystal is made perpendicular to sliding direction of a growing solution. CONSTITUTION:To obtain epitaxial layer by contacting a growing solution with a substrate single-crystal 13, the crystal 13 is fixed and the growing solution is slided. The crystal 13 is installed to a board so that stripe direction 15 of the crystal 13 is perpendicular to sliding direction 16 of the growing solution. Since meniscus line produced at the liquid phase epitaxial growing is made approximately parallel to stripe direction of an element, any element of bad life property caused by the meniscus line can be removed at selecting test for a short time. |
