| 摘要 |
PURPOSE:To form a semiconductor layer having excellent reproducibility by introducing a low-temperature process into a manufacturing process, and to obtain a solar cell having high efficiency by forming a first crystallite Si layer of opposite conductivity type having a large band gap on the light-receiving surface side of a polycrystalline Si substrate and forming a second crystallite Si layer of the same conductivity type having the large band gap on the rear side. CONSTITUTION:A first crystallite Si layer 1 having a band gap larger than polycrystalline Si substrate 11 formed onto a polycrystalline Si substrate 11 on the light-receiving surface side and a conductivity type reverse to the polycrystalline Si substrate 11 and a second crystallite Si layer 3 having a band gap larger than the polycrystalline Si substrate 11 formed onto the rear of the polycrystalline Si substrate 11 and the same conductivity type as the polycrystalline Si substrate 11 are shaped. Consequently, both the surface side and the rear side have the band gaps larger than the polycrystalline Si substrate 11, and the crystallite Si layers 1, 3 having a high barrier effect are used, thus acquiring a cell having high open circuit voltage as the operation of a solar cell and large short circuit currents. The crystallite Si layers 1, 3 are shaped at a low temperature of approximately 100 deg.C through a plasma CVD method, thus manufacturing the cell having high efficiency with excellent reproducibility. |
