发明名称 PRODUCTION OF SUPERCONDUCTING THIN FILM
摘要 PURPOSE:To increase the critical current density of a thin film of a superconductor of a compd. oxide represented by a specified formula when the thin film is formed by physical vapor deposition by carrying out the physical vapor deposition at a prescribed rate of film formation. CONSTITUTION:A thin film of a compd. oxide superconductor is formed on a substrate by physical vapor deposition. The superconductor is based on a compd. oxide represented by the formula (where Ln is Tm and/or Lu and x=0-1) and the physical vapor deposition is carried out at 0.05-1Angstrom /sec rate of film formation.
申请公布号 JPH01188662(A) 申请公布日期 1989.07.27
申请号 JP19880012331 申请日期 1988.01.22
申请人 SUMITOMO ELECTRIC IND LTD 发明人 TANAKA SABURO;ITOZAKI HIDEO;HIGAKI KENJIRO;YATSU SHUJI;JODAI TETSUJI
分类号 H01L39/24;C01G1/00;C01G3/00;C23C14/08;C23C14/22;C23C14/24;C30B29/22;H01B13/00;H01L39/12 主分类号 H01L39/24
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