| 摘要 |
PURPOSE:To reduce the impurity concentration dependency and temperature dependency of a resistance value by composing a resistor of a thin polycrystalline Si film having 10Angstrom or more to less than 500Angstrom of thickness. CONSTITUTION:An Si substrate 1, an SiO2 film 2, an Si3N4 film 3, a polycrystalline Si film 4 having 10-500Angstrom of thickness, a plasma Si nitride film 5, an Si3N4 film 6 and a polycrystalline Si film 7 are provided, the film 4 is of a resistor, surrounded by the film 5 or 3, 6, and the film 7 becomes the terminal of the resistor. The area resistivity ps of the film 4 in this embodiment is 70kOMEGA/square, and when it is compared with that having 3000Angstrom and 70kOMEGA/ square of the ps obtained by a conventional process, the impurity implanting amount B dose dependency of the ps is improved from 4.6 to 1.6 decades/decade, the variation rate of the ps from 50 to 0 deg.C is improved from 100% to 7%, and the variation ratio of the ps due to 60min of hydrogen annealing at 450 deg.C is improved from 75% to 17%, all largely improved. |
