| 摘要 |
PURPOSE:To increase the speed of the recovery operation of a lateral type load pnp transistor without augmenting impurity concentration in a substrate by adding and forming a high-concentration n-type layer onto a high- concentration n-type buried layer under a base region held by two p-type layers forming an emitter and a collector of the lateral type pnp transistor. CONSTITUTION:In a bipolar type semiconductor storage device in which a cross-couple type pnpn semiconductor memory-cell using a lateral type pnp transistor as load for the memory-cell is shaped onto an n-type epitaxial layer 15 formed onto one main surface of a p-type silicon substrate 11 through a high-concentration n-type buried layer 12, a high-concentration n-type layer 14 is added and shaped onto the high-concentration n-type buried layer 12 under a base region held by two p-type layers 17, 16 forming an emitter and a collector in said lateral type pnp transistor. Accordingly, the epitaxial layer just under the emitter-collector in the lateral type pnp transistor and in the base region is narrowed, and the number of carriers injected into these regions can be inhibited, thus increasing the speed of the recovery operation of the lateral type pnp transistor. |
