| 摘要 |
PURPOSE:To perform the single-crystallization of channels and the formation of Schottky barriers at one time of annealing by a method wherein aluminum which turns a gate electrode is provided under a silicon layer whereon a channel is formed and annealed by laser. CONSTITUTION:An aluminum pattern 3 is formed after forming an insulation film 2 on a substrare 1. Next, the pattern of a polycrystalline Si 4 is so formed as to cover a part of this pattern 3. Then, aluminum regions 5 and 6 are formed, which are decided as the source and drain of an MESFET. Thereafter, laser irradiation is performed. By this laser irradiation, Al-Si eutectic crystal is formed between the polycrystal Si 4 and the aluminum 3. Since aluminum diffuses into silicon by further irradiation, the Schottky barrier 7 is formed at this part. The polycrystalline region 4 not covered with the aluminums 5 and 6 turns single crystal Si by the above-mentioned laser irradiation. |
