发明名称 |
METHOD AND APPARATUS FOR EPTAXIAL MANUFACTURE OF SEMICONDUCTOR DEVICE OR OBJECT WITH LAYERS |
摘要 |
PURPOSE: To make the composition of a mixed gas quickly changeable without loss by changing the composition at every one or more cycles while the content of a gas pipette is periodically sent to a pulsating reactor by utilizing a pressure difference. CONSTITUTION: The gas components to be mixed with each other in a mixing chamber before the components are supplied to a pulsating reactor 1 are supplied to a gas pipette 9 through a line 10 under a pressure by opening a valve 11 and closing another valve 12. A mixing chamber is filled up with the gas components one cycle by one cycle by closing the valve 11 and opening the valve 12 after the pipette 9 is filled up with the gas components by opening the valve 11 and closing the valve 12. The content of the mixing chamber is supplied to the reactor 1 through a valve 2 while valves 3 and 6 are closed. The pipette 9 and the reactor 1 are simultaneously filled up with a new gas and the last formed mixed gas, respectively.
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申请公布号 |
JPH01187808(A) |
申请公布日期 |
1989.07.27 |
申请号 |
JP19880222186 |
申请日期 |
1988.09.05 |
申请人 |
SUTEIHITEINGU KATORIIKE UNIBERUSHITEITO |
发明人 |
YAAPU BAN SUHITEREN;RODEBIKUSU YOHANESU GIRINGU;YOSEFUSU EMANUERU MARIA HOGENKANPU |
分类号 |
C30B23/08;B01J4/02;B01L99/00;C23C16/44;C23C16/455;C30B25/14;H01L21/203;H01L21/205 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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