| 摘要 |
<p>PURPOSE:To improve the defective coverage of a barrier metallic layer, to fine a bump electrode and to obtain a method of forming the edge shape of a polyimide group resin layer preventing the generation of a crack in a cover film, by extending and forming the edge of the polyimide layer up to the upper section of an aluminum pad. CONSTITUTION:When a bump electrode is shaped onto a semiconductor chip, the upper section of a semiconductor substrate 1, in the specified region of the surface of which a metallic pad 2 is formed, is coated with cover films 10, 11, and a first contact window is shaped onto the fixed region of the metallic pad 2. A polyimide group resin layer 8 is formed onto the cover films 10, 11 including the inside of said first contact window, and a second contact window is shaped into said first contact window. A barrier metallic layer 4 is formed onto the polyimide group resin layer 8 containing the inside of said second contact window, a metallic bump 5 is shaped into a prescribed region on the barrier metallic layer 4, and the barrier metallic layer 4 is etched, using the metallic bump 5 as a mask.</p> |
