| 摘要 |
PURPOSE:To facilitate forming a satisfactory ohmic electrode on a p-type zinc sulfide selenide crystal side with good reproducibility by a method wherein a p-type III-V semiconductor crystal layer is built up on the p-type zinc sulfide selenide crystal built up on one layer of an n-type zinc sulfide selenide crystal. CONSTITUTION:An Si-doped n-type GaAs substrate is used as a substrate. An n-type ZnSxSe(1-*) crystal layer (0<=x<=1) is built up on the substrate by an MOCVD method and a p-type ZnSySe(1-y) crystal layer (0<=y<=1) is successively built up on it by an MOCVD method. Then a p-type GaAs layer is built up. If an Au-Ge electrode and an Au-Zn electrode are applied to the n-type side and the p-type side of the crystal construction built up like this respectively, an excellent p-n junction blue light emitting device can be obtained. By forming the p-type III-V compound semiconductor crystal layer on the p-type ZnSSe layer, the p-type layer side electrode can be made of material suitable for III-V crystal. With this constitution, an ohmic electrode on the p-type layer side can be stably formed. |
