| 摘要 |
PURPOSE:To obtain a light emitting element having low impurity concentration and preferable P/N junction by diffusing an acceptor impurity in a high purity crystalline layer to which the impurity is not added in case of obtaining a P-type crystal. CONSTITUTION:A low resistance N-type ZnSe layer 2 to which Cl is added is grown by a MOCVD method by an N-type GaAs substrate 1, and a ZnSe layer 3 to which an impurity is not added is then grown. Thereafter, when this crystal is heat treated at 350 deg.C in an Li atmosphere, the Li is diffused in the layer in which the impurity is not added to become a P-type, and a P/N junction can be formed. An Au film is formed as a P-type measuring electrode 4 on the P-type layer, and an N-type electrode 5 is formed of an Au-Ge film, and a current flows as a diode. Then, a preferable I-V characteristic is obtained, and a bright blue light is observed by applying a forward voltage thereto. |
