| 摘要 |
PURPOSE:To obtain the IC facilitated to control the characteristic when the dielectric insulatingly isolating substrate is to be formed by a method wherein layers containing inprtities in high concentration are formed in islands consisting of single crystal Si to be used as the buried layers for transistors. CONSTITUTION:A P<+> type layer 11 is grown epitaxially on the P type Si substrate 10 having the (100) face, makes 12 of the plural pieces are provided on the surface, and anisotropic etching is performed to dig V-shaped grooves in the substrate 10. Then the parts other than the wall faces of the grooves are covered with masks 13, P<+> type layers 14 are formed by diffusion on the exposed wall faces of the grooves, the parts other than the bases of the grooves are covered with masks 15, and the N type layers 16 are grown epitaxially to generate the single crystal layers 16 on the bases of the grooves, and polycrystalline layers 17 on the masks 15. After then, the layers 17 are etched to be removed, N<+> type regions 18 are formed by diffusion in the surface layer parts of the layers 16, and a polycrystalline Si layer 20 to act as the supporter is deposited on the whole surface interposing an SiO2 film 19 between them. Then the back of the substrate 10 is polished up to expose the film 19, and the island type N type layers 16 isolated by the dielectric of the films 19 and the P type layers 21 consisting of the substrate 10 are obtained. |
