发明名称 MANUFACTURE OF MESA-TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain predetermined insulation strength and improve adhesion between a passivation film and an inner surface of a mesa groove, by applying a glass paste by spinning to a thermal oxide film which is formed in a mesa groove and then baking it. CONSTITUTION:A thermal oxide film 14 is formed on an inner surface of a mesa groove 6 by a thermal oxidation method and a glass paste 16 is applied by spinning on the thermal oxide film 14 and then baked. Adhesion between a surface of silicon 2 exposing on an inner surface of the mesa groove 6 and the thermal oxide film 14 is good and the glass paste 16 is applied by spinning, so that the glass paste 16 can be uniformly formed over a PN junction part. As a result, a passivation film is uniformly formed on an inner surface of the mesa groove 6 and predetermined insulation strength can be obtained. In addition, adhesion between the passivation film and the inner surface of the mesa groove 6 is improved, so that it is possible to eliminate clearance.
申请公布号 JPH01186629(A) 申请公布日期 1989.07.26
申请号 JP19880006246 申请日期 1988.01.14
申请人 ROHM CO LTD 发明人 TANAKA YOSHINORI
分类号 H01L21/316;H01L29/06 主分类号 H01L21/316
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