| 摘要 |
PURPOSE:To eliminate dislocation to be caused in a substrate by strain, by providing a layer of transition metals such as Ni, Ta, Ti, Nb, Mo and W as well as their compounds specific in thickness as the lowermost layer of a multilayer metal layer. CONSTITUTION:An active layer 9 is formed on a substrate 30. An ohmic contact electrode 10 is formed on the active layer 9 each for source and drain, and a gate electrode 11 is formed between the source and the drain. A bonding electrode 12 is electrically connected with each of the source and drain electrodes and formed by electron beam evaporation in multilayer film structure on SiO2 which is made to protect the substrate 30, with a parameter of thickness. Ti of a lower layer electrode among the multilayer electrode films 12 is formed thin in 50-500A. In this way, transition on the substrate 30 caused by the electrode 12 can be reduced. |
