发明名称 Charge amplifier circuit comprising a junction field effect transistor.
摘要 <p>An Injector Junction Field Effect Transistor (IJFET) is disclosed which, in addition to having two gates (G1, G2) a drain (D) and a source (S), also has an injector (I). The device may be used as a high impedance charge or current amplifier in, for example, an x-ray flourescence device. On applying current to the injector, carriers are introduced into the channel of the device, allowing a small gate leakage current to flow to restore charge to the input. A small restore current is therefore controllable by low impedance injector circuits.</p>
申请公布号 EP0325383(A2) 申请公布日期 1989.07.26
申请号 EP19890300335 申请日期 1989.01.13
申请人 LINK ANALYTICAL LIMITED 发明人 NASHASHIBI, TAWFIC SAEB
分类号 H01L31/10;H01L21/337;H01L29/06;H01L29/739;H01L29/808;H03F3/70 主分类号 H01L31/10
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