| 摘要 |
PURPOSE:To control upper and lower resist opening widths separately, by exposing and developing each resist by charged particles at the stage of applying each resist when its resist is applied twice. CONSTITUTION:The first resist 13 is coated and formed on a substrate 12 and electron beams 14 are irradiated on the resist 13. Then, the resist 13 is developed and an opening 15 corresponding to the lower size of a fine electrode 11 is formed. After that, the second resist 16 is applied and formed in such a way that it covers the opening 15 in the resist 13 and then, the resist 16 is exposed and is developed by the electron beams 14 so as to include the opening 15. Electrode materials 11 are vaporized and resist films 13 and 16 as well as the electrode materials 11 on the resist 16 are removed by organic cleaning or the ashing treatment of oxygen plasma. In this way, the upper and lower resist films 13 and 16 are exposed and developed separately and the opening width of the upper layer resist film 13 is formed so that it is larger than the opening width of the lower layer resist film 16. Then, a low resistance electrode 11 having a T-section is formed. |
