发明名称 Semiconductor device having a constricted current path.
摘要 <p>The invention relates to an electric element, whose conductance is quantized in units 2e&lt;2&gt;/h realized in a multi-dimensional charge carrier gas, which is provided with a part of reduced width having a width of the order of the Fermi wavelength and a length smaller than the average free path length. Due to the small width of the part of reduced width, the energy levels are subdivided, as a result of which, at a temperature at which the distance between the levels is comparable with kT, the charge transport through the constriction is determined by quantum-mechanical effects. For the charge carrier gas, for example, a two-dimensional electron gas near a GaAs-AlGaAs hetero-junction may be used, for example, in a voltage divider.</p>
申请公布号 EP0324999(A2) 申请公布日期 1989.07.26
申请号 EP19880202937 申请日期 1988.12.19
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 VAN HOUTEN, HENDRIK;VAN WEES, BART JAN
分类号 H01L29/205;H01L21/335;H01L21/338;H01L21/822;H01L27/04;H01L29/06;H01L29/417;H01L29/423;H01L29/775;H01L29/778;H01L29/812;H01L29/86;H03M1/12 主分类号 H01L29/205
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