| 摘要 |
A field effect transistor includes an N-type semiconductor substrate of a drain region, a P-type base region formed in a surface of the semiconductor substrate, an N-type source region formed in the base region, a gate electrode formed on a base region between the source region and the semiconductor substrate, an N-type region having higher impurity concentration than the semiconductor substrate and formed in the surfaces of both the P-type base region and the N-type semiconductor substrate for forming a Zener diode between source and drain, a source electrode formed on the surface and connected to the source and base region, and a drain electrode connected to the semiconductor substrate. The N-type region for forming a Zener diode is formed by an ion implantation method. |
