| 摘要 |
PURPOSE:To selectively absorb a silicon compd. and to form a pattern with high accuracy by setting the temp. of a silylation treatment at the glass transition point of a desired part or above. CONSTITUTION:The difference in the glass transition point between an exposed part 5 and unexposed part 5' is increased and the silylation treatment is executed at the temp. above the glass transition point of the part intended to be absorbed with the silicon compd. and below the glass transition point of the part intended not to be absorbed with the silicon compd. in the case of forming the pattern by a silylation process. The absorption of the silicon compd. at a high selection ratio is thereby enabled and the pattern of a high selection ratio is formed. |
