METHOD AND APPARATUS FOR PLANAR MAGNETRON SPUTTERING WITH MODIFIED FIELD CONFIGURATION

摘要

The height of the principal surface of the compound target is varied alternately, so that the respective directions of the electric and magnetic fields are parallel at the boundary regions. The boundary regions are of an annular shape and are concentric with each other. A dual magnetic pole sputtering electric structure is used. It has an annular molybdenum target element, a silicon target element, which is doughnut shaped, surrounding it and a silicon disc element at its centre. The target elements are fixed to the electrode by metal bonding.