| 摘要 |
PURPOSE:To provide a silicon carbide semiconductor element excellent in operation characteristics by eliminating the production of any defect in a junction part owing to lattice mismatching and the mixing of any impurity into the junction part, by employing a hetero junction among different polygonal silicon carbide. CONSTITUTION:A light emitting diode 1 is constructed such that a p type alpha-SiC layer 13 of a wide forbidden band is placed on a p-n junction light emitting diode composed of a p type beta-SiC layer 12 and a n type beta-SiC substrate 11. A hetero junction is formed by the p type beta-SiC layer 12 and the p type alpha-SiC 13. The hetero junction is formed in such a manner with the alpha type silicon carbide 13 and the beta type silicon carbides 11, 12, eliminating lattice mismatching in the different polygonal hetero junction. Accordingly, production of any defect at the function part can be avoided. Further, the junction is for semiconductors having the same composition so that mixing of any impurity into the junction part can be avoided, assuring a silicon carbide semiconductor element of excellent operation characteristics. |
