| 摘要 |
<p>PURPOSE:To improve the yield, to increase the size, and to obtain minuteness by forming a metallic film on a formed metal/insulating film and forming an MIM structure of the metal, insulating film, and metal. CONSTITUTION:The metallic film is formed on a glass substrate and etched into a specific pattern by using resist. Then the insulating film is formed on the etched and exposed substrate to nearly the same thickness with the metallic film, the resist is peeled off, and the insulating film is formed on the entire surface of the flattened substrate. Then, the metallic film is formed on the formed metal/insulating film to form the MIM structure of the metal, insulating film, and metal. Namely, this process as a composing process for the MIM element and the insulating film which is formed crossing over a 1st metallic line is sandwiched. Consequently, the yield is improved, the size is reduced and the minuteness is obtained.</p> |
