发明名称 |
Process for the fabrication of a vertical contact |
摘要 |
A process for the formation of a compact vertical contact having reduced lateral space requirements yet compatible with highly planarized semiconductor manufacturing processes. The contact is made from a foundation region having a top surface to an overlying layer separated from the foundation region by a dielectric. The overlying layer can be contacted on its edge rather than on its top surface in order to reduce the lateral expanse of the contact.
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申请公布号 |
US4851257(A) |
申请公布日期 |
1989.07.25 |
申请号 |
US19870025539 |
申请日期 |
1987.03.13 |
申请人 |
HARRIS CORPORATION |
发明人 |
YOUNG, WILLIAM R.;RIVOLI, ANTHONY L. |
分类号 |
H01L21/74;H01L21/8238 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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