发明名称 |
Method of establishing a structure of electrical interconnections on a silicon semiconductor device |
摘要 |
After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.
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申请公布号 |
US4851369(A) |
申请公布日期 |
1989.07.25 |
申请号 |
US19880268149 |
申请日期 |
1988.11.07 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
ELLWANGER, RUSSELL C.;SCHMITZ, JOHANNES E. J. |
分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L29/43;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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