| 摘要 |
Disclosed is an improvement in a method of making a primary current detector by plasma enhanced chemical vapor deposition, where a gas mixture comprising a carrier gas, a dopant gas, and silane gas is passed through a plasma in a vacuum chamber thereby forming, on a conductive substrate, deposits of a blocking layer which comprises doped hydrogenated amorphous silicon, and then a photoconductive layer which comprises hydrogenated amorphous silicon. The improvement comprises controlling the process parameters within defined limits while reducing the flow of the silane gas to the vacuum chamber so as to deposit on the photoconductive layer a passivation layer about 0.05 to about 0.5 micrometers thick which comprises hydrogenated amorphous silicon doped with about 100 to about 2000 ppm of a dopant. Also disclosed is a primary current detector made by this method.
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