| 摘要 |
PURPOSE:To store electrical information stably by increasing stored electric charges by providing two capacitor layers on a silicon semiconductor substrate. CONSTITUTION:A first capacitor is constructed by a second conductivity type diffusion layer 4 formed on a first conductivity type silicon semiconductor substrate 1 and by a first polysilicon film 6 as an electrode disposed in opposition to the diffusion layer 4 through a first oxide film 5. Likewise, a second layer capacitor is constructed by a second polysilicon film 8 which is disposed between said second conductivity type diffusion layer 4 and the first polysilicon film 6 through a second oxide film 7 and which is connected at least in part to the diffusion layer 4. These respective capacitor layers are connected in parallel to each other vertically on the semiconductor substrate 1. This allows substantially twice electric charges to be stored on the semiconductor substrate 1, assuring stable storage of electrical information. |
